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APTC60HM70SCTG
Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module
VBUS
VDSS = 600V RDSon = 70m max @ Tj = 25C ID = 39A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies
CR1A
CR3A
Q1
CR1B
CR3B
Q3
Features *
G3 S3
G1 S1 CR2A OUT1 OUT2 CR4A
Q2
CR2B
CR4B
*
Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated
Q4
G2 S2 NTC1 0/VBUS NTC2
G4 S4
Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
* * * *
OUT2
G3 S3
G4 S4
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-8
APTC60HM70SCTG - Rev 3
Benefits * Outstanding performance at high frequency operation OUT1 0/VBUS VBUS * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for S1 NTC2 S2 G1 NTC1 G2 easy PCB mounting * Low profile * RoHS compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25C 39 ID Continuous Drain Current A Tc = 80C 29 IDM Pulsed Drain current 160 VGS Gate - Source Voltage 20 V RDSon Drain - Source ON Resistance 70 m PD Maximum Power Dissipation Tc = 25C 250 W IAR Avalanche current (repetitive and non repetitive) 20 A EAR Repetitive Avalanche Energy 1 mJ EAS Single Pulse Avalanche Energy 1800
July, 2006
APTC60HM70SCTG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V
Min Tj = 25C Tj = 125C 2.1
Typ
VGS = 10V, ID = 39A VGS = VDS, ID = 2.7mA VGS = 20 V, VDS = 0V
3
Max 25 250 70 3.9 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 39A Inductive Switching @ 125C VGS = 15V VBus = 400V ID = 39A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 400V ID = 39A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 400V ID = 39A, R G = 5
Min
Typ 7 2.56 0.21 259 29 111 21 30 283 84 402 980 658 1206
Max
Unit nF
nC
ns
J J
Series diode ratings and characteristics
Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V
di/dt = 200A/s
Min 200 Tj = 25C Tj = 125C Tc = 85C
Typ
Max 250 500
Unit V A A
VR=200V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
Tj = 25C Tj = 125C Tj = 25C Tj = 125C
24 48 33 150
ns nC
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2-8
APTC60HM70SCTG - Rev 3
July, 2006
Tj = 125C
30 1.1 1.4 0.9
1.15 V
APTC60HM70SCTG
Parallel diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions Tj = 25C Tj = 175C Tc = 125C Tj = 25C IF = 20A Tj = 175C IF = 20A, VR = 300V di/dt =800A/s f = 1MHz, VR = 200V VR=600V f = 1MHz, VR = 400V Min 600 Typ 100 200 20 1.6 2.0 28 130 100 Max 400 2000 1.8 2.4 Unit V A A V nC pF
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Transistor Series diode
Min
Typ
Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Max 0.5 1.2 1.5 150 125 100 4.7 160
Unit
C/W
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
2500 -40 -40 -40 2.5
V C N.m g Unit k K
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
Typ 50 3952
Max
RT =
R 25 T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
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3-8
APTC60HM70SCTG - Rev 3
July, 2006
APTC60HM70SCTG
SP4 Package outline (dimensions in mm)
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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4-8
APTC60HM70SCTG - Rev 3
July, 2006
APTC60HM70SCTG
Typical CoolMOS Performance Curve
0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.05 0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 200 ID, Drain Current (A)
6.5V 6V 5.5V
Transfert Characteristics 140 I D, Drain Current (A) 120 100 80 60 40 20 0 0
TJ=125C TJ=25C T J=-55C VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle
160 120 80
VGS=15&10V
5V
40 0 0
4.5V 4V
5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current
25
1 2 3 4 5 6 VGS, Gate to Source Voltage (V)
7
RDS(on) Drain to Source ON Resistance
1.1 I D, DC Drain Current (A) 60 1.05 1 0.95 0.9 0 10 20 30 40 50 I D, Drain Current (A)
Normalized to V GS=10V @ 19.5A VGS=10V
DC Drain Current vs Case Temperature 45 40 35 30 25 20 15 10 5 0 25
July, 2006 5-8 APTC60HM70SCTG - Rev 3
VGS=20V
50 75 100 125 TC, Case Temperature (C)
150
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APTC60HM70SCTG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) ON resistance vs Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
V GS=10V ID= 39A
Threshold Voltage vs Temperature 1.2
VGS(TH), Threshold Voltage (Normalized)
1000
I D, Drain Current (A)
1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C)
100
limited by RDSon
100s
10
Single pulse TJ=150C TC=25C 1 10 100
1 ms 10 ms
1
1000
VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage
VGS , Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage 100000
C, Capacitance (pF)
Ciss Coss
14 12 10 8 6 4 2 0 0 50 100 150 200 Gate Charge (nC) 250 300
July, 2006
10000
ID=39A TJ=25C
V DS=120V VDS=300V V DS =480V
1000
100
Crss
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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6-8
APTC60HM70SCTG - Rev 3
APTC60HM70SCTG
350 300
td(on) and td(off) (ns)
Delay Times vs Current 120
td(off)
Rise and Fall times vs Current
VDS=400V RG=5 T J=125C L=100H
100
tr and t f (ns)
250 200 150 100 50 0 0 10 20 30 40 50 60 70 ID, Drain Current (A) Switching Energy vs Current 2.5
Switching Energy (mJ)
V DS=400V R G=5 T J=125C L=100H td(on) VDS=400V RG=5 TJ=125C L=100H
tf
80 60 40 20 0 0
tr
10
20
30
40
50
60
70
ID, Drain Current (A) Switching Energy vs Gate Resistance 5 4 3 2
E on V DS =400V ID=39A T J=125C L=100H
Switching Energy (mJ)
2 1.5 1
E off
Eoff
Eon
0.5 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70
1 0 0 5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
Operating Frequency vs Drain Current 120
Frequency (kHz) I DR, Reverse Drain Current (A)
140
ZCS
100 80 60 40 20 0 5 10 15 20 25 30 ID, Drain Current (A) 35
VDS=400V D=50% RG=5 TJ=125C TC=75C ZVS
100
T J=150C
10
TJ=25C
Hard switching
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V)
July, 2006
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7-8
APTC60HM70SCTG - Rev 3
APTC60HM70SCTG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.6 Thermal Impedance (C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7
0 0.00001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Characteristics
TJ=25C
Reverse Characteristics
40
I F Forward Current (A)
400
IR Reverse Current (A)
35 30 25 20 15 10 5 0 0 0.5 1
350 300 250 200 150 100 50 0 200 300
T J=175C
T J=75C
T J=175C TJ=125C
T J=125C T J=75C
T J=25C
1.5
2
2.5
3
3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
400 500 600 700 VR Reverse Voltage (V)
800
800 700 C, Capacitance (pF) 600 500 400 300 200 100 0
July, 2006 APTC60HM70SCTG - Rev 3
1
10 100 VR Reverse Voltage
1000
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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8-8

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